A NEW-TYPE OF SCHOTTKY TUNNEL TRANSISTOR

被引：10
|
作者：
KIMURA, M
MATSUDATE, T
机构：
[1] Department of Electrical Engineering, Faculty of Engineering, Tohoku-Gakuin University, Tagajo, Miyagi Pref. 985, 1-13
来源：
IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 10期
关键词：
D O I：
10.1109/55.320985
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new type of tunnel transistor, in which electrons can tunnel through a very thin Schottky barrier between an n(+)-accumulation-layer formed just under a MOS gate for controlling the tunneling current and the Schottky metal, is proposed and demonstrated. This tunnel transistor has no threshold voltage in cathode current I-k vs. cathode voltage V-k curves. Theoretical calculations based on Stratton's tunneling theory are carried out and have trends similar to the experimental results.
引用
收藏
页码：412 / 414
页数：3
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