CYCLOTRON-RESONANCE OF 2-DIMENSIONAL ELECTRON-SYSTEMS UNDER THE INFLUENCE OF IONIZED IMPURITY-SCATTERING

被引：14
|
作者：
RICHTER, J
SIGG, H
VONKLITZING, K
PLOOG, K
机构：
[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80
来源：
SURFACE SCIENCE | 1990年 / 228卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90281-C
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Two-dimensional electron gases in AlGaAs/GaAs heterostructures with well defined additional impurity doping at the interface have been investigated by means of cyclotron resonance. Additional δ-doping in various concentrations within the spread of the wavefunction enabled the investigation of the specific influence of impurities on the CR in the two-dimensional electron gas. Donor (Si)-doped systems exhibit a pronounced, filling factor correlated oscillation of the CR linewidth and of the effective mass. Acceptor (Be)-doped systems exhibit a second resonance over a wide range of magnetic fields and a strong linewidth-narrowing in the quantum limit (ν ≤ 1), when only a single spin Landau level is occupied. The origin of these doping-specific effects is discussed. © 1990.
引用
收藏
页码：159 / 163
页数：5
相关论文
共 50 条
12345