FERROMAGNETIC-FERROMAGNETIC TUNNELING AND THE SPIN FILTER EFFECT

被引：39
|
作者：
LECLAIR, P [1 ]
MOODERA, JS [1 ]
MESERVEY, R [1 ]
机构：
[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期
关键词：
D O I：
10.1063/1.358218
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tunneling characteristics of a ferromagnetic-antiferromagnetic- ferromagnetic (FM-AFM-FM) thin film tunnel junction were studied in high magnetic fields with a view to investigate magnetic coupling by the tunneling process. Gd2O3, a stable oxide which undergoes antiferromagnetic ordering below about 3.9 K, was chosen as the tunnel barrier between the ferromagnetic electrodes Gd and permalloy. Tunnel characteristics showed as much as 32% decrease in junction resistance in an applied field of 20 T, below 4.2 K. The resistance behavior as a function of H can be explained by two different effects: firstly, the change in tunnel conductance due to change in the relative magnetization of the two FM electrodes in low H; secondly, the spin filter effect in high fields, due to the exchange splitting of the Gd 2O3 conduction band.
引用
收藏
页码：6546 / 6548
页数：3
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