FERROMAGNETIC-FERROMAGNETIC TUNNELING AND THE SPIN FILTER EFFECT

被引：39

作者：

LECLAIR, P ^{[1
]}

MOODERA, JS ^{[1
]}

MESERVEY, R ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.358218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling characteristics of a ferromagnetic-antiferromagnetic- ferromagnetic (FM-AFM-FM) thin film tunnel junction were studied in high magnetic fields with a view to investigate magnetic coupling by the tunneling process. Gd2O3, a stable oxide which undergoes antiferromagnetic ordering below about 3.9 K, was chosen as the tunnel barrier between the ferromagnetic electrodes Gd and permalloy. Tunnel characteristics showed as much as 32% decrease in junction resistance in an applied field of 20 T, below 4.2 K. The resistance behavior as a function of H can be explained by two different effects: firstly, the change in tunnel conductance due to change in the relative magnetization of the two FM electrodes in low H; secondly, the spin filter effect in high fields, due to the exchange splitting of the Gd 2O3 conduction band.

引用

页码：6546 / 6548

页数：3

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