X-RAY-LITHOGRAPHY BIDS FOR SUB-MICRON DOMINANCE

被引：0
|
作者：
LYMAN, J
机构：
来源：
ELECTRONICS | 1985年 / 58卷 / 48期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：45 / 46
页数：2
相关论文
共 50 条
  • [31] X-RAY-LITHOGRAPHY
    HARRELL, S
    [J]. SOLID STATE TECHNOLOGY, 1985, 28 (05) : 111 - 111
  • [32] REDUCTION LENSES FOR SUB-MICRON LITHOGRAPHY
    OMATA, T
    [J]. SOLID STATE TECHNOLOGY, 1984, 27 (09) : 173 - 177
  • [33] LITHOGRAPHY FOR A SUB-MICRON CMOS PROCESS
    POPPERT, P
    NOVAK, S
    WRIGHT, P
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1985, 538 : 46 - 50
  • [34] Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes
    Mappes, Timo
    Achenbach, Sven
    Mohr, Juergen
    [J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2007, 13 (3-4): : 355 - 360
  • [35] Process conditions in X-ray lithography for the fabrication of devices with sub-micron feature sizes
    Timo Mappes
    Sven Achenbach
    Juergen Mohr
    [J]. Microsystem Technologies, 2007, 13 : 355 - 360
  • [36] HIGH-POWER 13.3-A X-RAY SOURCE FOR SUB-MICRON LITHOGRAPHY
    FAY, B
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1194 - 1199
  • [37] MICRON AND SUB-MICRON LITHOGRAPHY FOR VLSI DEVICE FABRICATION
    VARNELL, GL
    [J]. SCANNING ELECTRON MICROSCOPY, 1981, : 343 - 350
  • [38] STABLE LOW-STRESS TUNGSTEN ABSORBER TECHNOLOGY FOR SUB-HALF-MICRON X-RAY-LITHOGRAPHY
    KOLA, RR
    CELLER, GK
    FRACKOVIAK, J
    JURGENSEN, CW
    TRIMBLE, LE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3301 - 3305
  • [39] ULTRAVIOLET AND X-RAY-LITHOGRAPHY
    NAGEL, DJ
    [J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1981, 279 : 98 - 110
  • [40] X-RAY-LITHOGRAPHY TECHNOLOGY
    URAI, M
    IGUCHI, K
    SHIGA, C
    [J]. SHARP TECHNICAL JOURNAL, 1988, (39): : 79 - 82
12345