APPLICATION OF ORGANIC RESIST MATERIALS IN SYNCHROTRON LITHOGRAPHY

被引：0
|
作者：
TRUBE, J
HEUBERGER, A
机构：
[1] Fraunhofer‐Institut für Mikrostrukturtechnik, Berlin, D‐1000
来源：
ANGEWANDTE MAKROMOLEKULARE CHEMIE | 1990年 / 183卷
关键词：
D O I：
10.1002/apmc.1990.051830107
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
In this contribution the requirements and application of organic resist materials in synchrotron lithography are discussed. The physico-chemical reactions in the resists are described on applying the principle of synchrotron lithography, using the available exposure source and its spectrum as well as the absorbing materials A general survey will be given regarding the presently available resist materials used in synchrotron lithography and semiconductor devices, which are herewith produced.
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页码：123 / 132
页数：10
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