STRESS TESTS ON 1.3-MU-M BURIED-HETEROSTRUCTURE LASER DIODE

被引：26
|
作者：
IKEGAMI, T
TAKAHEI, K
FUKUDA, M
KUROIWA, K
机构：
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 08期
关键词：
D O I：
10.1049/el:19830197
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：282 / 283
页数：2
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