STRESS TESTS ON 1.3-MU-M BURIED-HETEROSTRUCTURE LASER DIODE

被引：26

|

作者：

IKEGAMI, T

TAKAHEI, K

FUKUDA, M

KUROIWA, K

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 08期

关键词：

D O I：

10.1049/el:19830197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：282 / 283

页数：2

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