PHOTOCONDUCTIVITY OF COMPENSATED N-TYPE INAS

被引：0
|
作者：
MIKHAILOVA, MP [1 ]
PENTSOV, AV [1 ]
SLOBODCHIKOV, SV [1 ]
机构：
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：817 / 819
页数：3
相关论文
共 50 条
  • [31] Kinetics of photoconductivity in n-type GaN photodetector
    Kung, P., 1600, American Inst of Physics, Woodbury, NY, United States (67):
  • [32] Optical quenching of the photoconductivity in n-type GaN
    Lin, TY
    Yang, HC
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) : 3404 - 3408
  • [33] Kinetics of photoconductivity in n-type GaN photodetector
    Kung, P
    Zhang, X
    Walker, D
    Saxler, A
    Piotrowski, J
    Rogalski, A
    Razeghi, M
    APPLIED PHYSICS LETTERS, 1995, 67 (25) : 3792 - 3794
  • [34] Selective photoconductivity in n-type CdMnTe:Ga
    Bieg, B
    Kuzminski, S
    Morawski, A
    Pohoryles, B
    POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY, 1996, 51-5 : 403 - 406
  • [35] PHOTOMAGNETIC EFFECT AND PHOTOCONDUCTIVITY OF N-TYPE GAAS
    VORONKOV.NM
    NASLEDOV, DN
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (07): : 1736 - &
  • [36] Photoquenching of persistent photoconductivity in n-type GaN
    Hirsch, MT
    Seifert, O
    Kirfel, O
    Parisi, J
    Wolk, JA
    Walukiewicz, W
    Haller, EE
    Ambacher, O
    Stutzmann, M
    NITRIDE SEMICONDUCTORS, 1998, 482 : 531 - 536
  • [37] THERMAL ACTIVATION OF PHOTOCONDUCTIVITY OF N-TYPE CDTE
    NIKONYUK, ES
    SAVITSKII, AV
    PARFENYUK, OA
    CHIOKAN, IP
    ZAYACHKIVSKII, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 921 - 922
  • [38] Charge-Compensated n-Type Skutterudites
    Uher, Ctirad
    Li, Chang-Peng
    Ballikaya, Sedat
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (09) : 2122 - 2126
  • [39] MAGNETORESISTANCE OF STRONGLY COMPENSATED N-TYPE INSB
    CHUSOV, II
    YAREMENKO, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 830 - 831
  • [40] Charge-Compensated n-Type Skutterudites
    Ctirad Uher
    Chang-Peng Li
    Sedat Ballikaya
    Journal of Electronic Materials, 2010, 39 : 2122 - 2126
12345