共 50 条
- [1] INTRABAND PHOTOCONDUCTIVITY OF COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (08): : 972 - 976
- [2] SUBMILLIMETER PHOTOCONDUCTIVITY OF WEAKLY COMPENSATED N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 654 - 657
- [3] IMPURITY PHOTOCONDUCTIVITY OF EXACTLY COMPENSATED N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 532 - 534
- [4] OSCILLATIONS OF PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN N-TYPE INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 115 - 117
- [5] GALVANOMAGNETIC PROPERTIES OF COMPENSATED n-TYPE InAs. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (02): : 214 - 218
- [6] ABSORPTION-EDGE OF COMPENSATED N-TYPE INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 484 - &
- [7] IMPURITY PHOTOCONDUCTIVITY OF EXACTLY COMPENSATED n-TYPE GERMANIUM. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1977, 11 (05): : 532 - 534
- [8] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-COMPENSATED N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1449 - 1450
- [9] INFLUENCE OF UNIPOLAR INJECTION ON THE PHOTOCONDUCTIVITY OF EXACTLY COMPENSATED N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 829 - 831
- [10] PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE INSB AT MILLIMETER AND SUBMILLIMETER WAVELENGTHS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1099 - 1105