PHOTOELECTROCHEMICAL METHODS FOR SEMICONDUCTOR-DEVICE PROCESSING

被引：7
|
作者：
KOHL, PA
HARRIS, DB
机构：
[1] Georgia Institute of Technology, Atlanta
来源：
ELECTROCHIMICA ACTA | 1993年 / 38卷 / 01期
关键词：
PHOTOELECTROCHEMISTRY; SEMICONDUCTORS; CHEMICAL ETCHING; INDIUM PHOSPHIDE; GALLIUM ARSENIDE; INDIUM ARSENIDE;
D O I：
10.1016/0013-4686(93)80014-Q
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The usefulness and capabilities of photoelectrochemical processing of III-V semiconductors is presented. Examples include the etching of small period gratings, the formation of integral lenses, the decomposition of small bandgap semiconductors, the etching of p-type semiconductors, and the photoinitiated deposition of metal. The transport of carriers in the semiconductor and reactivity of the surfaces is discussed.
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页码：101 / 106
页数：6
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