HREM INVESTIGATION OF MBE-GROWN SINGLE AND MULTILAYER HETEROSTRUCTURES ON (100)-GAAS SUBSTRATES

被引：0
|
作者：
HOHENSTEIN, M [1 ]
PHILLIPP, F [1 ]
BRANDT, O [1 ]
TAPFER, L [1 ]
PLOOG, K [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
MBE-grown InAs/GaAs heterostructures of various types were investigated by HREM applying imaging parameters that allow a reliable direct interpretation of the micrographs. Single InAs layers appear atomically flat and grow coherently up to a thickness of two monolayers. In thicker layers, however, local relaxation is observed and the lattice mismatch between InAs and GaAs results in the incorporation of misfit dislocations. In the multilayer systems intermixing may occur depending on the thickness ratio of InAs:GaAs.
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页码：611 / 614
页数：4
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