Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures

被引：5
|
作者：
Volovik, BV
Kryzhanovskaya, NV
Sizov, DS
Kovsh, AR
Tsatsul'nikov, AF
Chi, JY
Wang, JS
Wei, L
Ustinov, VM
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Ind Technol Res Inst, Hsinchu 310, Taiwan
来源：
SEMICONDUCTORS | 2002年 / 36卷 / 09期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1507281
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy with different nitrogen content in the layers have been studied. The optical properties of GaAsN layers in the growth conditions under study are defined by the carrier recombination via localized states related to a strong composition inhomogeneity in the solid solution. The increasing of the nitrogen content raises the composition inhomogeneity and the carrier localization energy. (C) 2002 MAIK "Nauka / Interperiodica".
引用
收藏
页码：997 / 1000
页数：4
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