CHARACTERIZATION OF ION-BEAM DAMAGED SILICON BY SINGLE WAVELENGTH REFLECTION ELLIPSOMETRY

被引：0
|
作者：
BUCKNER, JL [1 ]
VITKAVAGE, DJ [1 ]
MAYER, TM [1 ]
IRENE, EA [1 ]
机构：
[1] UNIV N CAROLINA,CHAPEL HILL,NC 27514
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：295 / 296
页数：2
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