NEW ESR INVESTIGATION OF CLEAVED-SILICON SURFACE

被引：41
|
作者：
KAPLAN, D
LEPINE, D
PETROFF, Y
THIRRY, P
机构：
[1] THOMSON CSF, LAB CENT RECH, 91401 ORSAY, FRANCE
[2] ECOLE POLYTECH PALAISEAU, LAB PHYS MATIERE CONDENSEE, 91120 PALAISEAU, FRANCE
[3] UNIV PARIS 06, LAB PHYS SOLIDES, 75005 PARIS, FRANCE
来源：
PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 20期
关键词：
D O I：
10.1103/PhysRevLett.35.1376
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1376 / 1379
页数：4
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