NEW ESR INVESTIGATION OF CLEAVED-SILICON SURFACE

被引：41

作者：

KAPLAN, D

LEPINE, D

PETROFF, Y

THIRRY, P

机构：

[1] THOMSON CSF, LAB CENT RECH, 91401 ORSAY, FRANCE

[2] ECOLE POLYTECH PALAISEAU, LAB PHYS MATIERE CONDENSEE, 91120 PALAISEAU, FRANCE

[3] UNIV PARIS 06, LAB PHYS SOLIDES, 75005 PARIS, FRANCE

来源：

关键词：

D O I：

10.1103/PhysRevLett.35.1376

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1376 / 1379

页数：4

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