ELECTRICAL AND OPTICAL-PROPERTIES OF SI-DOPED AND SN-DOPED INXGA1-XAS(X CONGRUENT-TO 0.53) GROWN BY MOLECULAR-BEAM EPITAXY

被引：21
|
作者：
KUBIAK, RA [1 ]
HARRIS, JJ [1 ]
DAWSON, P [1 ]
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期
关键词：
D O I：
10.1063/1.333072
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：598 / 600
页数：3
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