CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OF NITROGEN

被引：1
|
作者：
GREGUSOVA, D
LALINSKY, T
MOZOLOVA, Z
MACHAJDIK, D
POCHABA, I
VAVRA, I
PORGES, M
机构：
[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava
来源：
THIN SOLID FILMS | 1994年 / 249卷 / 02期
关键词：
D O I：
10.1016/0040-6090(94)90771-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal stability of the sheet resistance of WNx metallization film prepared by ion implantation of nitrogen into sputtered tungsten film was investigated in correlation with microstructural changes examined by X-ray and transmission electron microscopy. The effect of microstructural properties on the sheet resistivity of the metallization film was demonstrated.
引用
收藏
页码：250 / 253
页数：4
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