CHARACTERIZATION OF WNX METALLIZATION PREPARED BY ION-IMPLANTATION OF NITROGEN

被引：1
|
作者：
GREGUSOVA, D
LALINSKY, T
MOZOLOVA, Z
MACHAJDIK, D
POCHABA, I
VAVRA, I
PORGES, M
机构：
[1] Institute of Electrical Engineering, Slovak Academy of Sciences, 842 39 Bratislava
来源：
THIN SOLID FILMS | 1994年 / 249卷 / 02期
关键词：
D O I：
10.1016/0040-6090(94)90771-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal stability of the sheet resistance of WNx metallization film prepared by ion implantation of nitrogen into sputtered tungsten film was investigated in correlation with microstructural changes examined by X-ray and transmission electron microscopy. The effect of microstructural properties on the sheet resistivity of the metallization film was demonstrated.
引用
收藏
页码：250 / 253
页数：4
相关论文
共 50 条
  • [1] PROPERTIES OF WNX GAAS SCHOTTKY CONTACTS PREPARED BY ION-IMPLANTATION OF NITROGEN
    LALINSKY, T
    KUZMIK, J
    GREGUSOVA, D
    MOZOLOVA, Z
    BREZA, J
    FECISKO, M
    SEIDL, P
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (03) : 157 - 161
  • [2] CHARACTERIZATION IN ION-IMPLANTATION
    LOOK, DC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C327 - C327
  • [3] STRUCTURAL CHARACTERIZATION OF NITROGEN ION-IMPLANTATION INTO SILICON FOR SENSOR TECHNOLOGY
    ROMANORODRIGUEZ, A
    ELHASSANI, A
    SAMITIER, J
    PEREZRODRIGUEZ, A
    MARTINEZ, S
    MORANTE, JR
    ESTEVE, J
    MONTSERRAT, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 702 - 705
  • [4] FORMATION OF ALN BY NITROGEN ION-IMPLANTATION
    RAUSCHENBACH, B
    KOLITSCH, A
    RICHTER, E
    [J]. THIN SOLID FILMS, 1983, 109 (01) : 37 - 45
  • [5] FeN foils by nitrogen ion-implantation
    Jiang, Yanfeng
    Al Mehedi, Md
    Fu, Engang
    Wang, Yongqiang
    Wang, Jian-Ping
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (17)
  • [6] PROCESSING OF TIN/TI METALLIZATION ON SILICON BY ARSENIC ION-IMPLANTATION
    MILOSAVLJEVIC, M
    BIBIC, N
    PERUSKO, D
    WILSON, IH
    JEYNES, C
    [J]. SURFACE & COATINGS TECHNOLOGY, 1990, 43-4 (1-3): : 996 - 1006
  • [7] CHARACTERIZATION OF SILICON-ON-INSULATOR STRUCTURES PRODUCED BY NITROGEN ION-IMPLANTATION
    FAN, TW
    YUAN, J
    BROWN, LM
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 421 - 426
  • [8] TIN FILMS PREPARED ON BERYLLIUM BY ION-IMPLANTATION
    QIU, CF
    XU, SR
    YANG, ZG
    [J]. WEAR, 1991, 151 (01) : 119 - 122
  • [9] METASTABLE ALLOYS OF BERYLLIUM PREPARED BY ION-IMPLANTATION
    BUENE, L
    KAUFMANN, EN
    HAMM, R
    MARRA, WC
    MCDONALD, ML
    [J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1984, 15 (10): : 1787 - 1805
  • [10] A NEW HYDRIDE - MGHX PREPARED BY ION-IMPLANTATION
    KOSTLER, H
    TRAVERSE, A
    NEDELLEC, P
    DUMOULIN, L
    RUAULT, MO
    SCHLAPBACH, L
    BURGER, JP
    BERNAS, H
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (45) : 8767 - 8776
12345