STUDY OF PUNCH-THROUGH CHARACTERISTICS IN IRRADIATED MOSFETS

被引：4
|
作者：
PACCAGNELLA, A
BISELLO, D
DAROLD, M
GOTRA, Y
BENETTI, P
机构：
[1] IST NAZL FIS NUCL,SEZ PADOVA,I-35131 PADUA,ITALY
[2] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY
[3] UNIV PAVIA,DIPARTIMENTO CHIM GEN,I-27100 PAVIA,ITALY
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期
关键词：
D O I：
10.1109/23.340609
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The DC and low frequency AC characteristics of the punch-through (PT) conduction have been examined in MOSFETs with different channel width/length ratios, fabricated on high resistivity Si substrates. The experimental results can be fitted by an analytical model deriving from a previous one developed for BARRITT devices. The modifications on the PT conduction induced by high dose neutron irradiation have been studied at various temperatures. The effects due to the radiation induced deep levels cannot be easily taken into account into the DC model, but can still be interpreted by using the AC model of the device.
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页码：2511 / 2520
页数：10
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