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- [2] A TEM STUDY OF OPTICALLY ANNEALED OHMIC CONTACTS TO GAAS USING A ZIRCONIUM DIBORIDE DIFFUSION BARRIER ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 589 - 594
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- [5] DIFFUSION BARRIER LAYERS FOR OHMIC CONTACTS TO GAAS JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 427 - 430
- [6] OPTICAL ANNEALING OF OHMIC CONTACTS FOR GAAS HIGH-SPEED INTEGRATED-CIRCUITS USING A ZIRCONIUM DIBORIDE BARRIER LAYER IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (03): : 67 - 70
- [7] Ohmic Contacts to n+-GaAs with Refractory Metal Sidewall Diffusion Barrier 2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON), 2015,
- [8] LOW-RESISTANCE NIAUGE/AU OHMIC CONTACTS ON N-TYPE (111)A GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (11A): : 4948 - 4949
- [9] DIFFUSION-MODEL FOR OHMIC CONTACTS TO GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1531 - 1534