MEASUREMENTS ON SILICON DEVICES WITH A SCANNING ELECTRON MICROSCOPE

被引：0

|

作者：

KONTRIMA.R

BRANDIS, EK

RAMSEY, JN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3940 / &

相关论文

共 50 条

[1] OBSERVATIONS ON SILICON CARBIDE DEVICES USING SCANNING ELECTRON MICROSCOPE
BUNTON, GV
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (12) : 977 - &
[2] QUANTITATIVE MEASUREMENTS OF BEAM INDUCED CURRENT USING A SCANNING ELECTRON-MICROSCOPE ON SILICON PLANAR DEVICES
BRESSE, JF
[J]. JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1976, 1 (04): : 539 - 550
[3] ELECTRON MACHINING OF SILICON OBSERVED WITH SCANNING ELECTRON MICROSCOPE
CHANG, THP
NIXON, WC
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3937 - &
[4] WAVEFORM MEASUREMENTS ON GIGAHERTZ SEMICONDUCTOR-DEVICES BY SCANNING ELECTRON-MICROSCOPE STROBOSCOPY
FUJIOKA, H
URA, K
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 81 - 82
[5] WAVEFORM MEASUREMENTS ON GIGAHERT SEMICONDUCTOR-DEVICES BY SCANNING ELECTRON-MICROSCOPE STROBOSCOPY
FUJIOKA, H
KUNIZAWA, H
URA, K
[J]. JOURNAL OF ELECTRON MICROSCOPY, 1981, 30 (03): : 233 - 233
[6] SCANNING ELECTRON-MICROSCOPE MEASUREMENTS OF DIFFUSION LENGTH IN NEUTRON-IRRADIATED SILICON
OTHMER, S
CURTIS, OL
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 204 - 208
[7] Measurements of the surface microroughness with the scanning electron microscope
Paluszynski, J.
Slowko, W.
[J]. JOURNAL OF MICROSCOPY, 2009, 233 (01) : 10 - 17
[8] MAGNETIC FIELD MEASUREMENTS IN SCANNING ELECTRON MICROSCOPE
THORNLEY, RF
HUTCHISON, JD
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1969, MAG5 (03) : 271 - +
[9] MAGNETIC FIELD MEASUREMENTS IN SCANNING ELECTRON MICROSCOPE
THORNLEY, RF
HUTCHINS.JD
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 249 - &
[10] Measurements of scan nonlinearity in a scanning electron microscope
Novikov Y.A.
[J]. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2013, 7 (6) : 1081 - 1085

← 1 2 3 4 5 →