DEFECT LEVELS IN THERMALLY-QUENCHED SILICON-CRYSTALS

被引：11
|
作者：
NAKASHIMA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 08期
关键词：
D O I：
10.1143/JJAP.24.1018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1018 / 1021
页数：4
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