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- [11] EBIC-CONTRAST OF DISLOCATIONS IN NORMAL-CDTE - EXPERIMENTS AND THEORY IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (09): : 1566 - 1571
- [12] EBIC CONTRAST OF SURFACE-PARALLEL DISLOCATIONS IN A PLANAR SEMICONDUCTOR DIODE WITH LARGE SURFACE RECOMBINATION PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : K199 - K203
- [13] QUANTITATIVE-EVALUATION OF THE EBIC CONTRAST OF DISLOCATIONS JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 269 - 275
- [15] QUANTITATIVE-EVALUATION OF THE EBIC CONTRAST OF DISLOCATIONS - REMARKS JOURNAL DE PHYSIQUE LETTRES, 1984, 45 (03): : L133 - L136
- [16] ON THE TEMPERATURE-DEPENDENCE OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON JOURNAL DE PHYSIQUE, 1986, 47 (02): : 171 - 173
- [17] EBIC CONTRAST INJECTION LEVEL DEPENDENCE OF DISLOCATIONS IN SILICON INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 755 - 758
- [18] ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE EBIC AND CATHODOLUMINESCENCE CONTRAST AT A DISLOCATION JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 21 - 21
- [19] Simulation of recombination contrast of extended defects in the modulated EBIC MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3): : 176 - 180
- [20] MODELING OF THE TEMPERATURE-DEPENDENCE OF THE EBIC-CONTRAST ON DISLOCATIONS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (09): : 1541 - 1546