共 50 条
- [1] EBIC CONTRAST THEORY OF DISLOCATIONS - INTRINSIC RECOMBINATION PROPERTIES REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (04): : 353 - 359
- [2] EBIC CONTRAST THEORY OF DISLOCATIONS - INTRINSIC RECOMBINATION PROPERTIES - REPLY REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (11): : 1109 - 1111
- [3] RECOMBINATION MECHANISM AT DISLOCATIONS IN GAAS EBIC CONTRAST STUDY JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 35 - 37
- [4] EBIC CONTRAST STUDY OF THE RECOMBINATION MECHANISM AT DISLOCATIONS IN GAAS JOURNAL DE PHYSIQUE III, 1992, 2 (03): : 325 - 333
- [5] THEORY OF RECOMBINATION ON DISLOCATIONS IN SILICON - INTERPRETATION OF THE EBIC-CONTRAST BY FUNDAMENTAL DISLOCATION PARAMETERS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1987, 51 (09): : 1582 - 1586
- [7] USE OF THE EBIC CONTRAST PROFILE AREA FOR EVALUATING THE RECOMBINATION STRENGTH OF DISLOCATIONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01): : K7 - K11
- [8] ON THE EBIC CONTRAST OF DISLOCATIONS IN SI PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (02): : 677 - 685
- [9] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 197 - 209
- [10] EBIC CONTRAST OF DISLOCATIONS IN MONOCRYSTALLINE CDTE JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1982, 7 (02): : A17 - A17