EFFECT OF INTERFACE DISORDER ON THE CONFINED PHONON MODES OF GAAS/ALAS SUPERLATTICES

被引：19

作者：

KECHRAKOS, D

BRIDDON, PR

INKSON, JC

机构：

[1] Department of Physics, University of Exeter, Exeter EX4 4QL, Stocker Road

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.44.9114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the longitudinal optical-phonon modes in GaAs/AlAs(001) superlattices with disordered interfaces, using an 11-parameter rigid-ion model and the coherent-potential approximation. We show that, due to interface disorder, the frequencies of the confined modes deviate substantially from the bulk dispersion curve, the zone-center optical anisotropy is reduced, and the electrostatic interface modes show in the Raman spectrum. Our results are in good agreement with existing Raman measurements.

引用

页码：9114 / 9117

页数：4

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