ENHANCED FLUX LINE PINNING IN PB DOPED BI2SR2CACU2O8+Y

被引:1
|
作者
PATIL, S
PAULOSE, PL
QUITMANN, C
GUNTHERODT, G
机构
[1] 2 Physikalisches Institut, RWTH Aachen
关键词
D O I
10.1016/0304-8853(92)90906-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetization measurements of Pb doped Bi2212 show an enhancement in hysteresis loop widths above 20 K compared to that of Bi2212. This implies improved critical current densities (J(c)) and pinning in Pb doped Bi2212 probably due to the presence of impurity phases. The values of the apparent pinning potential U0 calculated from magnetic relaxation measurements are larger for Pb doped Bi2212 up to a factor of two at 60 K.
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页码:521 / 522
页数:2
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