HEAVY-ION IRRADIATION EFFECTS ON PASSIVATED IMPLANTED PLANAR SILICON DETECTORS

被引：6
|
作者：
DECOSTER, W [1 ]
BRIJS, B [1 ]
VANDERVORST, W [1 ]
BURGER, P [1 ]
机构：
[1] CANBERRA SEMICOND NV,B-2430 OLEN,BELGIUM
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 64卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(92)95482-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Commercially available p+ nn+ passivated implanted planar silicon detectors have been shown to be very performing for standard RBS-analysis with He-4 beams. Lifetimes are found to range up till > 10(9) particles. The end of lifetime occurs concurrent with internal breakdown of the detector. Inverted n+ np+ detectors where the junction is located well outside the damage region, are expected to be less sensitive to the radiation damage and to have a higher lifetime. In the present paper the characteristics for heavy-ion detection of both types of detector are investigated and discussed upon.
引用
收藏
页码：287 / 291
页数：5
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