INDUSTRIAL APPLICATIONS OF PASSIVATED ION-IMPLANTED SILICON DETECTORS.

被引:0
|
作者
Burger, P. [1 ]
Beroud, Y. [1 ]
机构
[1] ENERTEC Schlumberger, Nuclear, Instrumentation Dep, Lingolsheim, Fr, ENERTEC Schlumberger, Nuclear Instrumentation Dep, Lingolsheim, Fr
来源
关键词
RADIOACTIVITY MEASUREMENT;
D O I
暂无
中图分类号
学科分类号
摘要
Three industrial applications have been developed with silicon passivated ion-implanted detectors. The first one is based on high resolution alpha spectroscopy reached with this kind of detector at room temperature. The second one deals with large area silicon detectors for alpha monitoring and the necessary reproducibility of the process. The last approach concerns silicon detectors used in the current mode.
引用
收藏
页码:45 / 49
相关论文
共 50 条
  • [1] INDUSTRIAL APPLICATIONS OF PASSIVATED ION-IMPLANTED SILICON DETECTORS
    BURGER, P
    BEROUD, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (01): : 45 - 49
  • [2] APPLICATIONS OF ION-IMPLANTED PASSIVATED SILICON DETECTORS TO X-RAY-ANALYSIS
    LAMPERT, MO
    PEUZIAT, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1984, 226 (01): : 68 - 71
  • [3] INTERSTRIP SURFACE EFFECTS IN OXIDE PASSIVE ION-IMPLANTED SILICON STRIP DETECTORS.
    Yorkston, J.
    Shotter, A.C.
    Syme, D.B.
    Huxtable, G.
    Nuclear instruments and methods in physics research, 1987, A262 (2-3): : 353 - 358
  • [4] INTERSTRIP SURFACE EFFECTS IN OXIDE PASSIVATED ION-IMPLANTED SILICON STRIP DETECTORS
    YORKSTON, J
    SHOTTER, AC
    SYME, DB
    HUXTABLE, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 262 (2-3): : 353 - 358
  • [5] PERFORMANCE AND APPLICATIONS OF ROOM-TEMPERATURE SILICON PASSIVATED ION-IMPLANTED X-RAY-DETECTORS
    BURGER, P
    LAMPERT, MO
    HENCK, R
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (01) : 344 - 347
  • [6] ION-IMPLANTED NUCLEAR RADIATION DETECTORS PASSIVATED WITH ANODIC SILICON-OXIDE
    VONBORANY, J
    MENDE, G
    SCHMIDT, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 212 (1-3): : 489 - 492
  • [7] PROPERTIES OF ION-IMPLANTED SILICON DETECTORS
    ZULLIGER, HR
    DRUMMOND, WE
    MIDDLEMAN, LM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) : 306 - +
  • [8] ION-IMPLANTED AND BAKEABLE SILICON DETECTORS
    HYDER, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 187 (2-3): : 595 - 598
  • [9] THE EFFECT OF RADIATION ON ION-IMPLANTED SILICON DETECTORS
    CAMPANELLA, M
    CROITORU, N
    GROPPI, F
    LEMEILLEUR, F
    PENSOTTI, S
    RANCOITA, PG
    SEIDMAN, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1986, 243 (01): : 93 - 97
  • [10] RESISTIVITY VARIATIONS IN ION-IMPLANTED SILICON DETECTORS
    RIJKEN, HA
    KLEIN, SS
    LIGTHART, WCM
    DEVOIGT, MJA
    BURGER, P
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1993, 40 (04) : 349 - 353