共 50 条
- [21] ION-IMPLANTED SILICON DETECTORS WITH HIGH SENSITIVITY TO BLUE-LIGHT. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (04): : 406 - 412
- [22] SUBNANOSECOND TIMING WITH ION-IMPLANTED DETECTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4): : 272 - 276
- [23] VOIDS IN ION-IMPLANTED SILICON RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
- [24] ION-IMPLANTED ARSENIC IN SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
- [25] STRUCTURE OF ION-IMPLANTED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
- [28] CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS .I. WINDOW THICKNESS OF ION-IMPLANTED SEMICONDUCTOR DETECTORS NUCLEAR INSTRUMENTS & METHODS, 1969, 70 (03): : 279 - +
- [30] GERMANIUM RADIATION DETECTORS WITH ION-IMPLANTED CONTACTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1014 - +