DISSIPATIVE TUNNELING IN 2-STATE SYSTEMS AT THE SI/SIO2 INTERFACE

被引：13

作者：

COBDEN, DH ^{[1
]}

UREN, MJ ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] DEF RES AGCY,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.71.4230

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed two-state systems (TSSs) in electrically stressed metal-oxide-silicon field-effects transistors, by studying random telegraph signals at low temperatures. The TSSs are related to defects close to the Si/SiO2 interface. The asymmetry energy epsilon is linear in gate voltage, permitting for the first time measurement of the dissipative tunneling rate as a function of epsilon independently of magnetic field. The electron coupling strength a lies in the range 10(-3) to 10(-2), allowing comparison with the standard theory in the previously unexplored regime of weak coupling.

引用

页码：4230 / 4233

页数：4

共 50 条

[41] DEFECT MICROCHEMISTRY AT THE SIO2/SI INTERFACE
RUBLOFF, GW
HOFMANN, K
LIEHR, M
YOUNG, DR
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (22) : 2379 - 2382
[42] SCALING OF SI/SIO2 INTERFACE ROUGHNESS
YOSHINOBU, T
IWAMOTO, A
SUDOH, K
IWASAKI, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04): : 1630 - 1634
[43] Position annihilation at the Si/SiO2 interface
[J]. 1600, (71):
[44] THE STRUCTURAL MODELS OF THE SI/SIO2 INTERFACE
OHDOMARI, I
AKATSU, H
YAMAKOSHI, Y
KISHIMOTO, K
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 89 (1-2) : 239 - 248
[45] Kapitza resistance of Si/SiO2 interface
Deng, B.
Chernatynskiy, A.
Khafizov, M.
Hurley, D. H.
Phillpot, S. R.
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
[46] DYNAMICS OF THE DISSIPATIVE 2-STATE SYSTEM
LEGGETT, AJ
CHAKRAVARTY, S
DORSEY, AT
FISHER, MPA
GARG, A
ZWERGER, W
[J]. REVIEWS OF MODERN PHYSICS, 1987, 59 (01) : 1 - 85
[47] Dependence of the stored charges and tunneling voltages on the tunneling SiO2 thickness for Si nanoparticles embedded in a SiO2 layer
Oh, Do-Hyun
Lee, Soojin
Cho, Woon-Jo
Kim, Tae Whan
[J]. JOURNAL OF CRYSTAL GROWTH, 2008, 310 (14) : 3290 - 3293
[48] Strong interface effects in graded SiO2/Si/SiO2 quantum wells
de Sousa, JS
Farias, GA
Freire, VN
da Silva, EF
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5369 - 5371
[49] SiO2 surface and SiO2/Si interface topography change by thermal oxidation
Tokuda, N
Murata, M
Hojo, D
Yamabe, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08): : 4763 - 4768
[50] SiO2 surface and SiO2/Si interface topography change by thermal oxidation
Tokuda, N.
Murata, M.
Hojo, D.
Yamabe, K.
[J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 4763 - 4768

← 1 2 3 4 5 →