DISSIPATIVE TUNNELING IN 2-STATE SYSTEMS AT THE SI/SIO2 INTERFACE

被引：13

作者：

COBDEN, DH ^{[1
]}

UREN, MJ ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] DEF RES AGCY,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.71.4230

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed two-state systems (TSSs) in electrically stressed metal-oxide-silicon field-effects transistors, by studying random telegraph signals at low temperatures. The TSSs are related to defects close to the Si/SiO2 interface. The asymmetry energy epsilon is linear in gate voltage, permitting for the first time measurement of the dissipative tunneling rate as a function of epsilon independently of magnetic field. The electron coupling strength a lies in the range 10(-3) to 10(-2), allowing comparison with the standard theory in the previously unexplored regime of weak coupling.

引用

页码：4230 / 4233

页数：4

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