SCHOTTKY-BARRIER FORMATION AT LOW METAL COVERAGES - A CONSISTENT MOLECULAR-ORBITAL CALCULATION FOR K ON GAAS(110) - REPLY

被引：1

|

作者：

ORTEGA, J

FLORES, F

机构：

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.65.525

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：525 / 525

页数：1

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[34] Study of the Gd/GaAs(110) system: interface and Schottky barrier formation at low and room temperatures
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[35] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY FORMATION OF A THIN OFF-STOICHIOMETRIC GAAS INTERLAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
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[36] EFFECT OF MECHANICAL STRESSES IN GAAS-METAL STRUCTURES WITH SCHOTTKY-BARRIER ON LOW-TEMPERATURE VOLT-AMPERE CHARACTERISTICS
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IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (03): : 97 - 101
[37] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT USING A THIN NONSTOICHIOMETRIC GAAS INTERFACE LAYER GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY
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[38] STUDIES OF AU-GAAS (001) INTERFACES PREPARED BY MOLECULAR-BEAM EPITAXY .1. OVERLAYER GROWTH AND SCHOTTKY-BARRIER FORMATION
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[39] AB-INITIO SELF-CONSISTENT FIELD MOLECULAR-ORBITAL CALCULATION OF GROUND-STATE OF TETRANITRATOTITANIUM(IV) - COMMENTS ON REACTIVITY OF ANHYDROUS METAL NITRATES
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JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1975, (19): : 1934 - 1938
[40] STUDIES ON FORMATION OF POLY(ETHYLENE TEREPHTHALATE) .5. MOLECULAR-ORBITAL CALCULATION FOR CATALYTIC ACTIVITY OF METAL-COMPOUNDS ON FORMATIVE REACTION OF POLY(ETHYLENE TEREPHTHALATE)
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