2ND BREAKDOWN IN TRANSISTORS

被引：0

|

作者：

MARSHALL, SL

机构：

来源：

SEMICONDUCTOR PRODUCTS AND SOLID STATE TECHNOLOGY | 1967年 / 10卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：25 / &

相关论文

共 50 条

[41] SAFE OPERATING AREA OF THE MOST - 2ND BREAKDOWN LIMITATIONS
TRANDUC, H
ROSSEL, P
SANCHEZ, JL
[J]. PHYSICA B & C, 1985, 129 (1-3): : 286 - 290
[42] ANALYSIS OF 2ND LEVEL RESONANT TUNNELING DIODES AND TRANSISTORS
SCHULMAN, JN
WALDNER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2859 - 2861
[43] 2nd Generation Bilayer Graphene Transistors for Applications in Nanoelectronics
Wessely, P. J.
Schwalke, U.
[J]. 2014 9TH IEEE INTERNATIONAL CONFERENCE ON DESIGN & TECHNOLOGY OF INTEGRATED SYSTEMS IN NANOSCALE ERA (DTIS 2014), 2014,
[44] ESTIMATE OF MINIMUM COLLECTOR CURRENT FOR INDUCING CURRENT MODE 2ND BREAKDOWN IN REVERSE BIASED EPITAXIAL BIPOLAR-TRANSISTORS
HASSAN, MMS
DOMINGOS, H
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1989, 66 (03) : 371 - 377
[45] 2nd Sex, 2nd Wave, 2nd Thoughts
Katz, Sue
[J]. NATION, 2009, 289 (05) : 2 - 2
[46] A 2ND 2ND OPINION
YEECHONG, H
[J]. BRITISH DENTAL JOURNAL, 1994, 176 (06) : 207 - 207
[47] 2ND 2ND WIND
MANDELL, AJ
[J]. PSYCHIATRIC ANNALS, 1979, 9 (03) : 57 - +
[48] A 2ND LOOK AT THE 2ND SCHOOL + 2ND CUBIST SCHOOL
WEST, T
[J]. ARTNEWS, 1986, 85 (04): : 147 - 149
[49] INFLUENCE OF AN EXTERNAL RESISTOR ON 2ND BREAKDOWNS IN EPITAXIAL PLANAR TRANSISTORS
HANE, K
MOGI, M
SUZUKI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (02) : 157 - 158
[50] THE 2ND THEOREM OF THE 2ND BEST
HOFF, K
[J]. JOURNAL OF PUBLIC ECONOMICS, 1994, 54 (02) : 223 - 242

← 1 2 3 4 5 →