共 50 条
- [3] 2ND BREAKDOWN PROTECTION OF MOS-TRANSISTORS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (06): : 389 - 391
- [5] DEVELOPMENT OF A 2ND BREAKDOWN MODEL FOR BIPOLAR-TRANSISTORS [J]. CONFERENCE RECORD OF THE 1989 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING, PTS 1-2, 1989, : 1243 - 1247
- [6] AVALANCHE INJECTION INFLUENCE ON 2ND BREAKDOWN IN DRIFT TRANSISTORS [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (12): : 2601 - 2607
- [8] 2ND BREAKDOWN IN HIGH-VOLTAGE SWITCHING TRANSISTORS [J]. ELECTRONICS LETTERS, 1976, 12 (20) : 525 - 527