LOCAL GENERATION OF THE MELTED PHASE DURING IMPULSE LASER SILICON ANNEALING

被引：0
|
作者：
PRISTREM, AM
DEMCHUK, AV
DANILOVICH, NI
机构：
来源：
ZHURNAL TEKHNICHESKOI FIZIKI | 1986年 / 56卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1220 / 1224
页数：5
相关论文
共 50 条
  • [1] ORIGINATION AND GROWTH OF A NEW PHASE IN METAL MELTED BY LASER IMPULSE
    GLYTENKO, AL
    SHMAKOV, VA
    DOKLADY AKADEMII NAUK SSSR, 1984, 276 (06): : 1392 - 1396
  • [2] CHARACTERISTICS OF PHASE-TRANSITIONS DURING NANOSECOND LASER SILICON ANNEALING
    ZHVAVYI, SP
    SADOVSKAYA, OL
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (19): : 1171 - 1176
  • [3] On the anomalous generation of {001} loops during laser annealing of ion-implanted silicon
    Marques, Luis A.
    Aboy, Maria
    Santos, Ivan
    Lopez, Pedro
    Cristiano, Fuccio
    La Magna, Antonino
    Huet, Karim
    Tabata, Toshiyuki
    Pelaz, Lourdes
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 458 : 179 - 183
  • [4] Transformation of laser surface melted TiAl intermetallic alloy during annealing treatment
    Wu, Guoqing
    Huang, Zheng
    Lin, Jianguo
    Yu, Gengsheng
    Ruan, Zhongjian
    Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 2002, 16 (04): : 385 - 388
  • [5] Formation of equiaxed grains in selective laser melted pure titanium during annealing
    Li, Cheng-Lin
    Wang, Chang-Shun
    Narayana, P. L.
    Hong, Jae-Keun
    Choi, Seong-Woo
    Kim, Jae H.
    Lee, Sang Won
    Park, Chan Hee
    Yeom, Jong-Taek
    Mei, Qingsong
    JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2021, 11 : 301 - 311
  • [6] Laser Annealing and Local Heating Effects during Raman Measurement of Hydrogenated Amorphous Silicon Films
    Yang, Y. -J.
    Yang, Y. -H.
    Peng, C. -Y.
    Liu, C. W.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010), 2010, 27 (01): : 1147 - 1151
  • [7] MELTING PHENOMENON DURING PULSED LASER ANNEALING IN SILICON
    PETROFF, PM
    AUSTON, DH
    PATEL, JR
    SMITH, P
    SAVAGE, A
    GOLOVCHENKO, JA
    JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 729 - 729
  • [8] LATTICE TEMPERATURE RISE OF SILICON DURING LASER ANNEALING
    VONDERLINDE, D
    WARTMANN, G
    APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1982, 29 (03): : 182 - 182
  • [9] LASER ANNEALING OF SILICON
    GODBOLE, VP
    CHAUDHARI, SM
    BULLETIN OF MATERIALS SCIENCE, 1988, 11 (2-3) : 97 - 108
  • [10] LASER ANNEALING OF SILICON
    POATE, JM
    BROWN, WL
    PHYSICS TODAY, 1982, 35 (06) : 24 - 30
12345