EFFECTS OF INTERFACIAL MICROSTRUCTURE ON UNIFORMITY AND THERMAL-STABILITY OF AUNIGE OHMIC CONTACT TO N-TYPE GAAS

被引:130
|
作者
SHIH, YC
MURAKAMI, M
WILKIE, EL
CALLEGARI, AC
机构
关键词
D O I
10.1063/1.339860
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:582 / 590
页数:9
相关论文
共 50 条
  • [41] Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n-type GaAs
    Kwak, JS
    Kim, HN
    Baik, HK
    Lee, JL
    Shin, DW
    Park, CG
    Kim, H
    Pyun, KE
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) : 3904 - 3909
  • [42] A microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to n-type GaAs
    Kwak, JS
    Baik, HK
    Kim, H
    Lee, JL
    Shin, DW
    Park, CG
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 571 - 576
  • [43] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .6. INW CONTACT METAL
    KIM, HJ
    MURAKAMI, M
    PRICE, WH
    NORCOTT, M
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 4183 - 4189
  • [44] Pd/Ge/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT
    Kim, IH
    MATERIALS LETTERS, 2002, 56 (05) : 775 - 780
  • [45] DEPENDENCE OF OHMIC CONTACT QUALITY ON AU-GE ALLOY THICKNESS FOR N-TYPE GAAS
    KALKUR, TS
    DELL, J
    NASSIBIAN, AG
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) : 729 - 736
  • [46] THERMAL-STABILITY OF OHMIC CONTACTS TO N-GAAS FORMED BY SCANNED ELECTRON-BEAM PROCESSING
    PRASAD, K
    FARAONE, L
    NASSIBIAN, AG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 618 - 624
  • [47] Improved microstructure and ohmic contact of Nb electrode on n-type 4H-SiC
    Jung, Kunhwa
    Sutou, Yuji
    Koike, Junichi
    THIN SOLID FILMS, 2012, 520 (23) : 6922 - 6928
  • [48] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
    SINHA, AK
    SMITH, TE
    LEVINSTEIN, HJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224
  • [49] THERMAL CONVERSION IN N-TYPE GAAS
    WYSOCKI, JJ
    JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1686 - 1686
  • [50] NiGe-based ohmic contacts to n-type GaAs
    Furumai, M
    Oku, T
    Ishikawa, H
    Otsuki, A
    Koide, Y
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) : 1684 - 1694