BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+

被引：25
|
作者：
COMAS, J
PLEW, L
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
[2] USN,WEAP SUPPORT CTR,CRANE,IN 47522
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 02期
关键词：
D O I：
10.1007/BF02652904
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：209 / 221
页数：13
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