EFFECT OF IRRADIATION ON THE PARAMETERS OF NEUTRON-TRANSMUTATION-DOPED SILICON

被引：0
|
作者：
BERMAN, LS [1 ]
VORONOV, IN [1 ]
GREKHOV, IV [1 ]
GRINSHTEIN, PM [1 ]
MOROKHOVETS, MA [1 ]
REMENYUK, AD [1 ]
机构：
[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR
来源：
INORGANIC MATERIALS | 1982年 / 18卷 / 08期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1052 / 1056
页数：5
相关论文
共 50 条
  • [41] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON
    SEAGER, CH
    CASTNER, TG
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 392 - 392
  • [42] RADIATION-ENHANCED OXYGEN PRECIPITATION IN NEUTRON-TRANSMUTATION-DOPED FLOATING-ZONE SILICON
    MENG, XT
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 129 (02): : K131 - K136
  • [43] FAR-INFRARED ABSORPTION OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    JANG, HF
    CRIPPS, G
    TIMUSK, T
    PHYSICAL REVIEW B, 1990, 41 (08): : 5152 - 5168
  • [44] THERMALLY STIMULATED CURRENT IN NEUTRON-TRANSMUTATION-DOPED SEMIINSULATING GAAS
    KURIYAMA, K
    YOKOYAMA, K
    SATOH, A
    APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1326 - 1328
  • [45] PULSED ANNEALING OF NEUTRON-TRANSMUTATION-DOPED GALLIUM-ARSENIDE
    KORSHUNOV, FP
    SOBOLEV, NA
    KOLIN, NG
    KUDRYAVTSEVA, EA
    PROKHORENKO, TA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1169 - 1171
  • [46] DEEP CENTERS IN NEUTRON-TRANSMUTATION-DOPED GALLIUM-ARSENIDE
    GARRIDO, J
    CASTANO, JL
    PIQUERAS, J
    SOLID-STATE ELECTRONICS, 1985, 28 (10) : 1039 - 1043
  • [47] ELECTROPHYSICAL PROPERTIES OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM WITH A MODIFIED ISOTOPIC COMPOSITION
    IONOV, AN
    MATVEEV, MN
    SHLIMAK, IS
    VOROBKALO, FM
    ZARUBIN, LI
    NEMISH, IY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 251 - 252
  • [48] LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs
    Kuriyama, K
    Sakai, K
    Okada, M
    PHYSICAL REVIEW B, 1996, 53 (03): : 987 - 989
  • [49] Annealing behavior of defects in neutron-transmutation-doped floating zone Si
    Meng, Xiangti, 1600, JJAP, Minato-ku, Japan (33):
  • [50] INVESTIGATION OF DEEP CENTERS IN NEUTRON-TRANSMUTATION-DOPED GALLIUM-ARSENIDE
    KOLCHENKO, TI
    LOMAKO, VM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1301 - 1302
12345