CONFIGURATION-INTERACTION DESCRIPTION OF TRANSITION-METAL IMPURITIES IN II-VI SEMICONDUCTORS

被引：109
|
作者：
MIZOKAWA, T
FUJIMORI, A
机构：
[1] Department of Physics, University of Tokyo, Bunkyo-ku
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.48.14150
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic properties of substitutional 3d transition-metal impurities in II-VI semiconductors have been studied using the cluster and Anderson impurity models with configuration interaction. It is shown that the photoemission and inverse-photoemission spectra, d-d optical-absorption spectra, exchange interaction between the 3d magnetic moment and the host band states, and donor and acceptor ionization energies can be reproduced with the same set of parameters, which show systematic variation with expected chemical trends. The importance of multiplet effects in the formation of donor and acceptor levels within the band gap is demonstrated.
引用
收藏
页码：14150 / 14156
页数：7
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