INTRACENTER TRANSITIONS OF TRANSITION-METAL IMPURITIES IN II-VI SEMICONDUCTORS

被引：2
|
作者：
BOUHELAL, A [1 ]
ALBERT, JP [1 ]
机构：
[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP CC74,PL E BATAILLON,F-34095 MONTPELLIER 5,FRANCE
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(93)90247-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A configuration interaction approach to the calculation of multiplet effects in the spectra of transition metal impurities in II-VI semiconductors is presented. This method shares with the classical crystal field theory the advantage of requiring a low number of parameters. However, it is free from the traditional difficulties associated with the classical theory.
引用
收藏
页码：255 / 258
页数：4
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