MODULATION BEHAVIOR OF SEMICONDUCTOR INJECTION-LASERS

被引：39

作者：

ARNOLD, G ^{[1
]}

RUSSER, P ^{[1
]}

机构：

[1] AEG TELEFUNKEN, FORSCHUNGSINST, D-7900 ULM, FED REP GER

来源：

APPLIED PHYSICS | 1977年 / 14卷 / 03期

关键词：

D O I：

10.1007/BF00882730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：255 / 268

页数：14

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