Optimization of ohmic contact for InP-based transferred electronic devices

被引：0
|
作者：
Wu Deqi [1 ]
Ding Wuchang [1 ]
Yang Shanshan [1 ,2 ]
Jia Rui [1 ]
Jin Zhi [1 ]
Liu Xinyu [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Microwave Devices & Integrated Circuits Dept, Inst Microelect, Beijing 100029, Peoples R China
[2] Ningxia Univ, Sch Phys & Elect Informat Sci, Yinchuan 750021, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2014年 / 35卷 / 03期
关键词：
circular transmission line model; specific contact resistance; InP; transferred electronic devices; differential negative resistance;
D O I：
10.1088/1674-4926/35/3/036001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.2 x 10(-7) Omega center dot cm(2) was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 degrees C. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 5 x 10(-18) cm(-3) in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 degrees C.
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页数：5
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