Optimization of ohmic contact for InP-based transferred electronic devices

被引：0

作者：

武德起 ^{[1
]}

丁武昌 ^{[1
]}

杨姗姗 ^{[1
,2
]}

贾锐 ^{[1
]}

金智 ^{[1
]}

刘新宇 ^{[1
]}

机构：

[1] Key Laboratory of Microelectronics Devices & Integrated Technology, Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences

[2] School of Physics and Electrical Information Science, Ningxia University

来源：

Journal of Semiconductors | 2014年 / 03期

关键词：

circular transmission line model; specific contact resistance; InP; transferred electronic devices; differential negative resistance;

D O I：

暂无

中图分类号：

TN601 [理论];

学科分类号：

080903 ;

摘要：

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.

引用

页码：162 / 166

页数：5

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