ION-BEAM CRYSTALLOGRAPHY OF THE GASB (110) SURFACE

被引:7
|
作者
SMIT, L
TROMP, RM
VANDERVEEN, JF
机构
关键词
D O I
10.1016/0168-583X(84)90215-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:322 / 325
页数:4
相关论文
共 50 条
  • [1] ION-BEAM CRYSTALLOGRAPHY OF THE NI(110)-(2 BY 1)O SURFACE
    SMEENK, RG
    TROMP, RM
    SARIS, FW
    [J]. SURFACE SCIENCE, 1981, 107 (2-3) : 429 - 438
  • [2] ION-BEAM CRYSTALLOGRAPHY OF INAS-GASB SUPER-LATTICES
    CHU, WK
    SARIS, FW
    CHANG, CA
    LUDEKE, R
    ESAKI, L
    [J]. PHYSICAL REVIEW B, 1982, 26 (04): : 1999 - 2010
  • [3] ION-BEAM CRYSTALLOGRAPHY AT THE SI(100) SURFACE
    TROMP, RM
    SMEENK, RG
    SARIS, FW
    [J]. PHYSICAL REVIEW LETTERS, 1981, 46 (14) : 939 - 942
  • [4] CALCULATION OF CHANNELING AND BLOCKING EFFECTS FOR ION-BEAM SURFACE CRYSTALLOGRAPHY
    VANDERVEEN, JF
    TROMP, RM
    SMEENK, RG
    SARIS, FW
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 171 (01): : 143 - 148
  • [5] ION-BEAM CRYSTALLOGRAPHY OF SURFACES AND INTERFACES
    SARIS, FW
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3): : 625 - 632
  • [6] ION-BEAM CRYSTALLOGRAPHY OF METAL-SILICON INTERFACES
    VANLOENEN, EJ
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1984, 40 : C382 - C383
  • [7] ION-BEAM CRYSTALLOGRAPHY OF SEMICONDUCTOR INTERFACES AND HETEROEPITAXIAL FILMS
    VANDERVEEN, JF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1946 - 1946
  • [8] SURFACE MODIFICATION BY ION-BEAM
    NAKASHIMA, S
    ISHIKAWA, Y
    [J]. JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 1994, 39 (11) : 939 - 944
  • [9] ION-BEAM CRYSTALLOGRAPHY OF INGAAS EPITAXIAL LAYERS ON INP SUBSTRATES
    COLE, JM
    EARWAKER, LG
    CULLIS, AG
    CHEW, NG
    BASS, SJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2639 - 2641
  • [10] ION-BEAM CRYSTALLOGRAPHY OF CLEAN AND SULFUR COVERED NI(100)
    VANDERVEEN, JF
    TROMP, RM
    SMEENK, RG
    SARIS, FW
    [J]. SURFACE SCIENCE, 1979, 82 (02) : 468 - 480