共 50 条
- [3] DEPOSITION OF EPITAXIAL LAYERS BY ION-BEAM METHODS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 812 - 816
- [5] ION-BEAM ETCHING OF INGAAS, INP, GAAS, SI, AND GE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03): : 701 - 705
- [6] THE PRODUCTION OF EPITAXIAL LAYERS OF SILICON BY ION-BEAM SPUTTERING JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 473 - 479
- [7] Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates Crystallography Reports, 2019, 64 : 649 - 655
- [9] LATTICE-DEFECTS IN LPE INP-INGAASP-INGAAS STRUCTURE EPITAXIAL LAYERS ON INP SUBSTRATES PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 70 (01): : 277 - 286