A CURVATURE-CORRECTED LOW-VOLTAGE BANDGAP REFERENCE

被引：92
|
作者：
GUNAWAN, M
MEIJER, GCM
FONDERIE, J
HUIJSING, JH
机构：
[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,ELECTR LAB,2628 CD DELFT,NETHERLANDS
[2] DELFT UNIV TECHNOL,DEPT ELECT ENGN,ELECTR INSTRUMENTAT LAB,2628 CD DELFT,NETHERLANDS
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1993年 / 28卷 / 06期
关键词：
D O I：
10.1109/4.217981
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new curvature-corrected bandgap reference is presented which is able to function at supply voltages as low as 1 V, at a supply current of only 100 muA. After trimming this bandgap reference has a temperature coefficient (TC) of +/- 4 ppm/degrees-C. The reference voltage is about 200 mV and it can simply be adjusted to higher reference voltages. The temperature range of this circuit is from 0 to 125-degrees-C. This bandgap reference is realized using a standard bipolar process with base-diffused resistors.
引用
收藏
页码：667 / 670
页数：4
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