A multiple transistor combination low-voltage curvature-corrected bandgap reference

被引：0
|
作者：
苏凯 [1 ,2 ]
龚敏 [1 ,2 ]
秦怀斌 [3 ]
孙晨 [1 ,2 ]
机构：
[1] College of Physical Science and Technology,Sichuan University
[2] Key Laboratory of Micro-Electronics Technology of Sichuan Province
[3] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
来源：
Journal of Semiconductors | 2013年 / 06期
关键词：
bandgap reference; temperature coefficient; multiple transistor combination; PSRR; line regulation;
D O I：
暂无
中图分类号：
TN43 [半导体集成电路（固体电路）];
学科分类号：
080903 ; 1401 ;
摘要：
A new bandgap reference(BGR) curvature compensation technology is proposed,which is a kind of multiple transistor combination.On the basis of the existing first-order bandgap reference technology,a compensation current circuit consisting of a sink current branch and a source current branch is added.The BGR was designed and simulated by using Semiconductor Manufacturing International Corporation(SMIC) 0.18μm CMOS process.The simulation results showed that when the power supply voltage was 1 V,the temperature coefficient of the BGR was 2.08 ppm/℃with the temperature range from—40 to 125℃,the power supply rejection ratio (PSRR) was—64.77 dB and the linear regulation was 0.44 mV/V with the supply power changing from 0.85 to 1.8 V.
引用
收藏
页码：152 / 156
页数：5
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