LINEWIDTH ENHANCEMENT FACTOR IN GAAS/ALGAAS MULTI-QUANTUM-WELL LASERS

被引：23
|
作者：
OGASAWARA, N
ITO, R
MORITA, R
机构：
[1] Univ of Tokyo, Dep of Applied, Physics, Tokyo, Jpn, Univ of Tokyo, Dep of Applied Physics, Tokyo, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 07期
关键词：
SEMICONDUCTING ALUMINUM COMPOUNDS - Applications - SEMICONDUCTING GALLIUM ARSENIDE - Applications;
D O I：
10.1143/JJAP.24.L519
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The linewidth enhancement factor alpha in GaAs/AlGaAs multi-quantum-well (MQW) lasers has been determined from the spontaneous emission spectra below threshold. It is demonstrated that the value of alpha in MQW lasers is appreciably smaller than that in conventional double heterostructure (DH) lasers because of the enhanced carrier-density-derivative of the optical gain.
引用
收藏
页码：L519 / L521
页数：3
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