H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR

被引：0

作者：

CHERN, HN ^{[1
]}

LEE, CL ^{[1
]}

LEI, TF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S.

引用

页码：115 / 117

页数：3

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